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2N7002E - N-channel TrenchMOS FET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.

Key Features

  • s Logic level threshold compatible s Surface-mounted package s Very fast switching s TrenchMOS™ technology 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N7002E N-channel TrenchMOS™ FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level threshold compatible s Surface-mounted package s Very fast switching s TrenchMOS™ technology 1.3 Applications s Logic level translator s High speed line driver 1.4 Quick reference data s VDS ≤ 60 V s RDSon ≤ 3 Ω s ID ≤ 385 mA s Ptot = 0.83 W 2. Pinning information Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D) 1 2 3 D Simplified outline Symbol G SOT23 mbb076 S Philips Semiconductors 2N7002E N-channel TrenchMOS™ FET 3.