2N7002E
description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS™ technology.
1.2 Features s Logic level threshold patible s Surface-mounted package s Very fast switching s Trench MOS™ technology
1.3 Applications s Logic level translator s High speed line driver
1.4 Quick reference data s VDS ≤ 60 V s RDSon ≤ 3 Ω s ID ≤ 385 m A s Ptot = 0.83 W
2. Pinning information
Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D)
1 2 3
Simplified outline
Symbol
SOT23 mbb076
Philips Semiconductors
N-channel Trench MOS™ FET
3. Ordering information
Table 2: Ordering information Package Name 2N7002E TO-236AB Description plastic surface mounted package; 3 leads Version SOT23 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source...
