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Mitsubishi Electric Semiconductor

CM100DU-24NFH Datasheet Preview

CM100DU-24NFH Datasheet

IGBT MODULES

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CM100DU-24NFH
MITSUBISHI IGBT MODULES
CM100DU-24NFH
HIGH POWER SWITCHING USE
¡IC ................................................................... 100A
¡VCES ......................................................... 1200V
¡Insulated Type
¡2-elements in a pack
APPLICATION
High frequency switching use (30kHz to 60kHz).
Gradient amplifier, Induction heating, power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM
7
17
TC measured point
94
80 ±0.25
23 23
2–φ6.5
MOUNTING HOLES
C2E1
E2
C1
Dimensions in mm
4
3–M5NUTS
12mm deep
12
16 2.5 25 2.5 16
LABEL
13.5
TAB #110. t=0.5
C2E1
E2
C1
CIRCUIT DIAGRAM
Feb. 2009




Mitsubishi Electric Semiconductor

CM100DU-24NFH Datasheet Preview

CM100DU-24NFH Datasheet

IGBT MODULES

No Preview Available !

MITSUBISHI IGBT MODULES
CM100DU-24NFH
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
PC(Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
G-E Short
C-E Short
Operation
Pulse
Operation
Pulse
TC = 25°C
TC’ = 25°C*4
Conditions
(Note 2)
(Note 2)
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
Ratings
1200
±20
100
200
100
200
560
730
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
Unit
V
V
A
A
A
A
W
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
ICES
Collector cutoff current
Test conditions
VCE = VCES, VGE = 0V
Limits
Min. Typ.
——
VGE(th) Gate-emitter threshold voltage IC = 10mA, VCE = 10V
4.5 6
IGES
VCE(sat)
Gate leakage current
±VGE = VGES, VCE = 0V
Collector-emitter saturation voltage IC = 100A, VGE = 15V
Tj = 25°C
Tj = 125°C
5.0
5.0
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
Rth(j-c’)R
RG
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance*1
Contact thermal resistance
Thermal resistance*4
External gate resistance
VCE = 10V
VGE = 0V
VCC = 600V, IC = 100A, VGE = 15V
VCC = 600V, IC = 100A
VGE = ±15V
RG = 3.1, Inductive load
IE = 100A
IE = 100A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound Applied*2 (1/2 module)
IGBT part (1/2 module)
FWDi part (1/2 module)
3.1
450
5.0
0.07
*1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
*4 : Case temperature (TC’) measured point is just under the chips.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. No short circuit capability is designed.
Max.
1
7.5
0.5
6.5
16
1.3
0.3
100
50
250
150
150
3.5
0.22
0.47
0.17*3
0.29*3
31
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
K/W
K/W
Feb. 2009
2


Part Number CM100DU-24NFH
Description IGBT MODULES
Maker Mitsubishi Electric Semiconductor
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