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Powerex Power Semiconductors

CM100DU-12H Datasheet Preview

CM100DU-12H Datasheet

Dual IGBT Module

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DU-12H
Dual IGBTMOD™
U-Series Module
100 Amperes/600 Volts
TC Measured
Point
E
A
B
FG
H
D
C
C2E1 E2
C1
J
2 - Mounting
Holes
K (6.5 Dia.)
V
3-M5 Nuts
O
P
L
MN
O
QP
0.110 - 0.5 Tab
S
RT
U
C2E1
E2
E2
G2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
Inches
3.7
3.15±0.01
1.89
0.94
0.28
0.67
0.91
0.91
0.43
0.71
0.16
Millimeters
94.0
80.0±0.25
48.0
24.0
7.0
17.0
23.0
23.0
11.0
18.0
4.0
Dimensions Inches
Millimeters
M 0.47 12.0
N 0.53 13.5
O 0.1
2.5
P 0.63 16.0
Q 0.98 25.0
R 1.18 +0.04/-0.02 30.0 +1.0/-0.5
S 0.3
7.5
T 0.83 21.2
U 0.16
4.0
V 0.51 13.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100DU-12H is a
600V (VCES), 100 Ampere Dual
IGBTMOD™ Power Module.
Current Rating
VCES
Type Amperes Volts (x 50)
CM 100
12
21




Powerex Power Semiconductors

CM100DU-12H Datasheet Preview

CM100DU-12H Datasheet

Dual IGBT Module

No Preview Available !

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DU-12H
Dual IGBTMOD™ U-Series Module
100 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM100DU-12H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C, Tj 150°C)
Mounting Torque, M5 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
-40 to 150
-40 to 125
600
±20
100
200*
100
200*
400
31
Mounting Torque, M6 Mounting
– 40
Weight
– 310
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V, Tj = 25°C
IC = 100A, VGE = 15V, Tj = 125°C
VCC = 300V, IC = 100A, VGE = 15V
IE = 100A, VGE = 0V
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
4.5
Typ.
6
2.4
2.6
200
Max.
1
0.5
7.5
3.0
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VCE = 10V, VGE = 0V
VCC = 300V, IC = 100A,
VGE1 = VGE2 = 15V,
RG = 6.3, Resistive
Load Switching Operation
IE = 100A, diE/dt = -200A/µs
IE = 100A, diE/dt = -200A/µs
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min. Typ. Max. Units
– – 8.8 nf
– – 4.8 nf
– – 1.3 nf
– 100
ns
– 250
ns
– 200
ns
– 300
ns
– 160
ns
0.24 –
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
Per IGBT 1/2 Module
Per FWDi 1/2 Module
Per Module, Thermal Grease Applied
Min.
Typ.
0.035
Max.
0.31
0.7
Units
°C/W
°C/W
°C/W
22


Part Number CM100DU-12H
Description Dual IGBT Module
Maker Powerex Power Semiconductors
PDF Download

CM100DU-12H Datasheet PDF






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