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Powerex Power Semiconductors

CM100DU-12F Datasheet Preview

CM100DU-12F Datasheet

IGBT Module

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DU-12F
Trench Gate Design
Dual IGBTMOD™
100 Amperes/600 Volts
P - NUTS (3 PLACES)
TC MEASURING
POINT
A
ND
C2E1
E2
C1
B
Q (2 PLACES)
E
F
H
F
G
MK
K
J
R
CL
C2E1
RTC
E2
RTC
G2
E2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions Inches
Millimeters
A 3.70 94.0
B
1.89±0.01
48.0±0.25
C 1.18 +0.04/-0.02 30.0 +1.0/-0.5
D 3.15 80.0
E 0.43 11.0
F 0.16
4.0
G 0.71
18.0
H 0.02
0.5
Dimensions
J
K
L
M
N
P
Q
R
Inches
0.53
0.91
1.13
0.67
0.28
M5
0.26 Dia.
0.16
Millimeters
13.5
23.0
28.7
17.0
7.0
M5
6.5 Dia.
4.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
UPS
Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100DU-12F is a
600V (VCES), 100 Ampere Dual
IGBTMOD™ Power Module.
Current Rating
VCES
Type Amperes Volts (x 50)
CM 100
12
1




Powerex Power Semiconductors

CM100DU-12F Datasheet Preview

CM100DU-12F Datasheet

IGBT Module

No Preview Available !

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DU-12F
Trench Gate Design Dual IGBTMOD
100 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Tj
Tstg
VCES
VGES
IC
Peak Collector Current
Emitter Current** (Tc = 25°C)
ICM
IE
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C, Tj 150°C)
Mounting Torque, M5 Main Terminal
IEM
Pc
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
CM100DU-12F
-40 to 150
-40 to 125
600
±20
100
200*
100
200*
350
31
40
310
2500
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
ICES
I GES
VGE(th)
VCE(sat)
QG
VEC
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V, Tj = 25°C
IC = 100A, VGE = 15V, Tj = 125°C
VCC = 300V, IC = 100A, VGE = 15V
IE = 100A, VGE = 0V
5
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Typ.
6
1.6
1.6
620
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Max.
1
20
7
2.2
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
2


Part Number CM100DU-12F
Description IGBT Module
Maker Powerex Power Semiconductors
PDF Download

CM100DU-12F Datasheet PDF






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