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Powerex Power Semiconductors

CM100DU-24H Datasheet Preview

CM100DU-24H Datasheet

Dual IGBT Module

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DU-24H
Dual IGBTMOD™
U-Series Module
100 Amperes/1200 Volts
A
ND
Q - (2 PLACES)
P - NUTS
(3 PLACES)
C2E1
E2
C1
B
E
F
G
H
F
MK
K
J
CL
C2E1
E2
G2
E2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions Inches
Millimeters
A 3.7
94.0
B 1.89 48.0
C 1.18 +0.04/-0.02 30.0 +1.0/-0.5
D 3.15±0.01
80.0±0.25
E 0.43 11.0
F 0.16
4.0
G 0.71
18.0
H 0.02
0.5
Dimensions
J
K
L
M
N
P
Q
R
Inches
0.53
0.91
1.13
0.67
0.28
M5
0.26 Dia.
0.02
R
Millimeters
13.5
23.0
28.7
17.0
7.0
M5
6.5 Dia.
4.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100DU-24H is a
1200V (VCES), 100 Ampere Dual
IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
100
CVES
Volts (x 50)
24
49




Powerex Power Semiconductors

CM100DU-24H Datasheet Preview

CM100DU-24H Datasheet

Dual IGBT Module

No Preview Available !

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DU-24H
Dual IGBTMOD™ U-Series Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM100DU-24H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C, Tj 150°C)
Mounting Torque, M5 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
-40 to 150
-40 to 125
1200
±20
100
200*
100
200*
600
31
Mounting Torque, M6 Mounting
– 40
Weight
– 310
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min. Typ. Max. Units
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V, Tj = 25°C
IC = 100A, VGE = 15V, Tj = 125°C
VCC = 600V, IC = 100A, VGE = 15V
IE = 100A, VGE = 0V
– –1
– – 0.5
4.5 6
7.5
– 2.9 3.7
– 2.85 –
– 375
– – 3.2
mA
µA
Volts
Volts
Volts
nC
Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VCE = 10V, VGE = 0V
VCC = 600V, IC = 100A,
VGE1 = VGE2 = 15V,
RG = 3.1, Resistive
Load Switching Operation
IE = 100A, diE/dt = -200A/µs
IE = 100A, diE/dt = -200A/µs
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min. Typ. Max. Units
– 15
nf
– – 5 nf
– – 3 nf
– 100
ns
– 200
ns
– 300
ns
– 350
ns
– 300
ns
0.55 –
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT 1/2 Module
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi 1/2 Module
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
Min.
Typ.
0.035
Max.
0.19
0.35
Units
°C/W
°C/W
°C/W
50


Part Number CM100DU-24H
Description Dual IGBT Module
Maker Powerex Power Semiconductors
PDF Download

CM100DU-24H Datasheet PDF






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