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Mitsubishi Electric Semiconductor

CM100DU-24H Datasheet Preview

CM100DU-24H Datasheet

IGBT MODULES

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CM100DU-24H
MITSUBISHI IGBT MODULES
CM100DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
IC ................................................................... 100A
VCES ....................................................... 1200V
Insulated Type
2-elements in a pack
APPLICATION
UPS, NC machine, AC-Drive control, Servo, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
7
17
TC measured point
94
80 ±0.25
23 23
2–φ6.5
MOUNTING HOLES
C2E1
E2
C1
Dimensions in mm
4
3–M5NUTS
12mm deep
12
16 2.5 25 2.5 16
LABEL
13.5
TAB #110. t=0.5
C2E1
E2
C1
CIRCUIT DIAGRAM
Feb. 2009
1




Mitsubishi Electric Semiconductor

CM100DU-24H Datasheet Preview

CM100DU-24H Datasheet

IGBT MODULES

No Preview Available !

MITSUBISHI IGBT MODULES
CM100DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
Item
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC Collector current
ICM
IE (Note 2) Emitter current
IEM (Note 2)
PC (Note 3) Maximum collector dissipation
Tj Junction temperature
Tstg Storage temperature
Viso Isolation voltage
— Mounting torque
— Weight
Conditions
VGE = 0V
VCE = 0V
TC = 25°C
Pulse
(Note 1)
TC = 25°C
Pulse
(Note 1)
TC = 25°C
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
Ratings
1200
±20
100
200
100
200
650
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N·m
N·m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Item
Test Conditions
Limits
Min Typ
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
——
VGE(th)
Gate-emitter
threshold voltage
IC = 10mA, VCE = 10V
4.5 6
IGES
Gate-leakage current
±VGE = VGES, VCE = 0V
——
VCE(sat)
Collector-emitter
saturation voltage
IC = 100A, VGE = 15V
Tj = 25°C
(Note 4) Tj = 125°C
— 2.9
— 2.85
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
——
——
——
QG Total gate charge
VCC = 600V, IC = 100A, VGE = 15V
— 375
td (on)
Turn-on delay time
VCC = 600V, IC = 100A
——
tr
td (off)
Turn-on rise time
Turn-off delay time
VGE = ±15V
RG = 3.1
——
——
tf Turn-off fall time
Resistive load
——
VEC(Note 2)
trr (Note 2)
Qrr (Note 2)
Rth(j-c)Q
Rth(j-c)R
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance (Note 5)
IE = 100A, VGE = 0V
IE = 100A,
die / dt = –200A / µs
Junction to case, IGBT part (Per 1/2 module)
Junction to case, FWDi part (Per 1/2 module)
——
——
— 0.55
——
——
Rth(c-f)
Contact thermal resistance
Case to heat sink, conductive grease applied
(Per 1/2 module)
(Note 6)
0.07
Note 1. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Case temperature (TC) measured point is shown in page OUTLINE DRAWING.
6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
Max
1
7.5
0.5
3.7
15
5
3
100
200
300
350
3.2
300
0.19
0.35
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
K/W
K/W
K/W
Feb. 2009
2


Part Number CM100DU-24H
Description IGBT MODULES
Maker Mitsubishi Electric Semiconductor
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CM100DU-24H Datasheet PDF






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