* RDS(ON)≦3.6mΩ@VGS=10V
* RDS(ON)≦5.1mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cur.

* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch Ordering Information: ME7.

The ME7814S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are pa.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts