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ME7814S-G - N-Channel MOSFET

Download the ME7814S-G datasheet PDF. This datasheet also covers the ME7814S variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The ME7814S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦3.6mΩ@VGS=10V.
  • RDS(ON)≦5.1mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME7814S-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME7814S-G
Manufacturer Matsuki
File Size 1.02 MB
Description N-Channel MOSFET
Datasheet download datasheet ME7814S-G Datasheet

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Other Datasheets by Matsuki

Part Number Description
ME7814S N-Channel MOSFET
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ME7802S-G N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel 30V (D-S) MOSFET ME7814S/ME7814S-G GENERAL DESCRIPTION The ME7814S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (DFN(S) 3.3x3.3) Top View FEATURES ● RDS(ON)≦3.6mΩ@VGS=10V ● RDS(ON)≦5.1mΩ@VGS=4.