* RDS(ON)≦3.6mΩ@VGS=10V
* RDS(ON)≦5.1mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cur.

* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch Ordering Information: ME7.

The ME7814S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are pa.

ME7814S

ME7812S-G

ME7818S-G

ME7802-G

ME7802S-G

ME7804-G

ME7804AS-G

ME7804S-G

ME7806S-G

ME7809

ME7809-G

ME7835

ME7835-G

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