ME7812S-G datasheet, mosfet equivalent, Matsuki

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Features and benefits

* RDS(ON) ≦8.5mΩ@VGS=10V
* RDS(ON) ≦17.5mΩ@VGS=4.5V APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* L.

Application

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC P.

Description

The ME7812S N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly.

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