RDS(ON) mΩ@VGS=10V RDS(ON) mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLIC.

Portable Equipment Battery Powered System DC/DC Converter Load Switch e Ordering Information: ME7802-G (Green product-H.

The ME7802-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par.

ME7802S-G

ME7804-G

ME7804AS-G

ME7804S-G

ME7806S-G

ME7809

ME7809-G

ME7812S-G

ME7814S

ME7814S-G

ME7818S-G

ME7835

ME7835-G

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