ME7809-G mosfet equivalent, p-channel mosfet.
* RDS(ON)≦10mΩ@VGS=-10V
* RDS(ON)≦16mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cur.
* Power Management in Note book
* Battery Powered System
* DC/DC Converter low side switching
* Load Swi.
The ME7809 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology . This high density process is especially tailored to minimize on-state resistance. These devices are part.
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