Datasheet4U Logo Datasheet4U.com

ME7809-G - P-Channel MOSFET

Download the ME7809-G datasheet PDF. This datasheet also covers the ME7809 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The ME7809 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology .

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦10mΩ@VGS=-10V.
  • RDS(ON)≦16mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME7809-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME7809-G
Manufacturer Matsuki
File Size 927.83 KB
Description P-Channel MOSFET
Datasheet download datasheet ME7809-G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ME7856 8-BIT MICRO-CONTROLLER ELAN Microelectronics Corp
ME78565 8-BIT MICRO-CONTROLLER ELAN Microelectronics Corp
ME78565AM 8-BIT MICRO-CONTROLLER ELAN Microelectronics Corp
ME78565AWM 8-BIT MICRO-CONTROLLER ELAN Microelectronics Corp
ME78565BM 8-BIT MICRO-CONTROLLER ELAN Microelectronics Corp

Other Datasheets by Matsuki

Part Number Description
ME7809 P-Channel MOSFET
ME7802-G N-Channel MOSFET
ME7802S-G N-Channel MOSFET
ME7804-G N-Channel MOSFET
ME7804AS-G N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME7809 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology . This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and other battery powered circuits in a very small outline surface mount package. PIN CONFIGURATION (DFN 3x3) Botton View ME7809/ME7809-G FEATURES ● RDS(ON)≦10mΩ@VGS=-10V ● RDS(ON)≦16mΩ@VGS=-4.