ME7802S-G mosfet equivalent, n-channel mosfet.
RDS(ON)
mΩ@VGS=10V
RDS(ON)
mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLIC.
Portable Equipment Battery Powered System DC/DC Converter Load Switch
Ordering Information: ME7802S-G (Green product-Ha.
The ME7802S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are pa.
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