ME7806S-G Datasheet, Matsuki

* RDS(ON) ≦8.5mΩ@VGS=10V
* RDS(ON) ≦16.5mΩ@VGS=4.5V APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* L.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC P.

The ME7806S N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly.