* RDS(ON) ≦16mΩ@VGS=10V
* RDS(ON) ≦25mΩ@ VGS=4.5V APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Loa.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC

The ME7804-G N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularl.

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