ME2N7002E mosfet equivalent, n-channel mosfet.
* 60V / 0.50A , RDS(ON)= 5.0Ω@VGS=10V
* 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V
* Super high density cell design for extremely
low RDS (ON)
* Exceptional on-.
requiring up to 300mA DC and can deliver pulsed currents up to 1.2A. These products are particularly suited for low volt.
The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perfor.
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