ME2N7002D
ME2N7002D is N-Channel MOSFET manufactured by Matsuki.
DESCRIPTION
The ME2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-23) Top View
FEATURES
- Simple Drive Requirement
- Small Package Outline
- ROHS pliant
- ESD Rating = 2000V HBM
Mechanical data
- High density cell design for low RDS(ON)
- Voltage controlled small signal switching.
- Rugged and reliable.
- High saturation current capability.
- High-speed switching.
- Not thermal runaway.
- The soldering temperature and time shall not exceed...
