ME2N7002D mosfet equivalent, n-channel mosfet.
* Simple Drive Requirement
* Small Package Outline
* ROHS Compliant
* ESD Rating = 2000V HBM
Mechanical data
* High density cell design for low RDS(ON.
The ME2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are pa.
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