ME2N7002D2 - N-Channel MOSFET

Matsuki

General Description

The ME2N7002D2 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦4.5Ω@VGS=10V.
RDS(ON)≦5.5Ω@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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ME2N7002D2 n-channel mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	ME2N7002D2
Manufacturer	Matsuki
File Size	627.43 KB
Description	N-Channel MOSFET
Datasheet	ME2N7002D2 Datasheet

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Other Datasheets by Matsuki

Part Number	Description
ME2N7002D2-G	N-Channel MOSFET
ME2N7002D2KW-G	Dual N-Channel MOSFET
ME2N7002D	N-Channel MOSFET
ME2N7002D1KW-G	Dual N-Channel MOSFET
ME2N7002DA	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N - Channel 60V (D-S) MOSFET ME2N7002D2/ME2N7002D2-G GENERAL DESCRIPTION The ME2N7002D2 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON)≦4.5Ω@VGS=10V ● RDS(ON)≦5.5Ω@VGS=4.