Datasheet4U Logo Datasheet4U.com

ME2N7002D2-G - N-Channel MOSFET

Download the ME2N7002D2-G datasheet PDF. This datasheet also covers the ME2N7002D2 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME2N7002D2 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦4.5Ω@VGS=10V.
  • RDS(ON)≦5.5Ω@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME2N7002D2-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME2N7002D2-G
Manufacturer Matsuki
File Size 627.43 KB
Description N-Channel MOSFET
Datasheet download datasheet ME2N7002D2-G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ME2N7002E N-Channel 60V MOSFET VBsemi
ME2-CH2O-16x15 Electrochemical Formaldehyde Sensor Winsen
ME2-CH2O-D16 Electrochemical Formaldehyde Sensor Winsen
ME2-CO-D14-C Electrochemical Carbon Monoxide sensor Winsen
ME2-O2-D20 Electrochemical Oxygen Sensor Winsen

Other Datasheets by Matsuki

Part Number Description
ME2N7002D2 N-Channel MOSFET
ME2N7002D2KW-G Dual N-Channel MOSFET
ME2N7002D N-Channel MOSFET
ME2N7002D1KW-G Dual N-Channel MOSFET
ME2N7002DA N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N - Channel 60V (D-S) MOSFET ME2N7002D2/ME2N7002D2-G GENERAL DESCRIPTION The ME2N7002D2 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON)≦4.5Ω@VGS=10V ● RDS(ON)≦5.5Ω@VGS=4.