Datasheet4U Logo Datasheet4U.com

ME2N70023E1-G - N-Channel MOSFET

General Description

The ME2N70023E1-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON) ≦4Ω@VGS=10V.
  • RDS(ON) ≦4Ω@VGS=4.5V.
  • ESD Protection HBM≧1KV.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Capable doing Cu wire bonding.

📥 Download Datasheet

Datasheet Details

Part number ME2N70023E1-G
Manufacturer Matsuki
File Size 2.32 MB
Description N-Channel MOSFET
Datasheet download datasheet ME2N70023E1-G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ME2N7002E N-Channel 60V MOSFET VBsemi
ME2-CH2O-16x15 Electrochemical Formaldehyde Sensor Winsen
ME2-CH2O-D16 Electrochemical Formaldehyde Sensor Winsen
ME2-CO-D14-C Electrochemical Carbon Monoxide sensor Winsen
ME2-O2-D20 Electrochemical Oxygen Sensor Winsen

Other Datasheets by Matsuki

Part Number Description
ME2N70023D2-G N-Channel MOSFET
ME2N7002D N-Channel MOSFET
ME2N7002D1KW-G Dual N-Channel MOSFET
ME2N7002D2 N-Channel MOSFET
ME2N7002D2-G N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel 60V (D-S) MOSFET, ESD Protection PGrEoNteEcRtAeLd DESCRIPTION The ME2N70023E1-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION Small SOT-23 Top View ME2N70023E1-G FEATURES ● RDS(ON) ≦4Ω@VGS=10V ● RDS(ON) ≦4Ω@VGS=4.