ME2N70023E1-G N-Channel MOSFET
● RDS(ON) ≦4Ω@VGS=10V
● RDS(ON) ≦4Ω@VGS=4.5V
● ESD Protection HBM≧1KV
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resi.
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
● DSC
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