ME2N70023E1-G Datasheet, Matsuki

* RDS(ON) ≦4Ω@VGS=10V
* RDS(ON) ≦4Ω@VGS=4.5V
* ESD Protection HBM≧1KV
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resi.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC <.

The ME2N70023E1-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are.