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ME2N70023D2-G - N-Channel MOSFET

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Datasheet Details

Part number ME2N70023D2-G
Manufacturer Matsuki
File Size 1.70 MB
Description N-Channel MOSFET
Datasheet download datasheet ME2N70023D2-G Datasheet

General Description

The ME2N70023D2-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.

Overview

N-Channel 60V (D-S) MOSFET, ESD Protection PGrEoNteEcRtAeLd.

Key Features

  • RDS(ON) ≦3Ω@VGS=10V.
  • RDS(ON) ≦4Ω@VGS=4.5V.
  • RDS(ON) ≦4.5Ω@VGS=3V.
  • ESD Protection HBM≧2KV.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Capable doing Cu wire bonding.

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