● RDS(ON) ≦3Ω@VGS=10V
● RDS(ON) ≦4Ω@VGS=4.5V
● RDS(ON) ≦4.5Ω@VGS=3V
● ESD Protection HBM≧2KV
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
● Capable doing Cu wire bonding
APPLICATIONS
● Power Management in Note book
● Portabl.