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CGHV96050F2 Datasheet, MACOM

CGHV96050F2 hemt equivalent, gan hemt.

CGHV96050F2 Avg. rating / M : 1.0 rating-12

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CGHV96050F2 Datasheet

Features and benefits


* 8.4 - 9.6 GHz Operation
* 80 W POUT typical
* 10 dB Power Gain
* 55% Typical PAE
* 50 Ohm Internally Matched
* <0.1 dB Power Droop Applications.

Application


* Marine Radar
* Weather Monitoring
* Air Traffic Control
* Maritime Vessel Traffic Control
* Port S.

Description

The CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superio.

Image gallery

CGHV96050F2 Page 1 CGHV96050F2 Page 2 CGHV96050F2 Page 3

TAGS

CGHV96050F2
GaN
HEMT
CGHV96050F1
CGHV96100F2
CGHV96130F
MACOM

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