Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Conditions
Drain-source Voltage
Gate-source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Drain Current1
Maximum Forward Gate Current
Soldering Temperature2
Screw Torque
VDSS
VGS
PDISS
TSTG
TJ
IDMAX
IGMAX
TS
τ
100
-10, +2
115.2 / 222.0
-65, +150
225
12
28.8
245
40
Volts
Volts
Watts
˚C
˚C
Amps
mA
˚C
in-oz
25˚C
25˚C
(CW / Pulse)
25˚C
Thermal Resistance, Junction to Case
RθJC
0.63
˚C/W
Pulse Width = 100 µs, Duty
Cycle = 10%, PDISS = 222.0 W
Thermal Resistance, Junction to Case
RθJC
1.06
˚C/W
CW, 85˚C, PDISS = 115.2 W
Case Operating Temperature
TC -40, +95 ˚C
Note:
1 Current limit for long term reliable operation.
2 Refer to the Application Note on soldering at http://www.cree.com/rf/tools-and-support/document-library
Electrical Characteristics (Frequency = 9.6 GHz unless otherwise stated; TC = 25˚C)
Characteristics
DC Characteristics1
Gate Threshold Voltage
Gate Quiscent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
RF Characteristics3
Small Signal Gain
Symbol
VGS(TH)
VGS(Q)
IDS
VBD
S21
Min.
-3.8
–
21.0
100
–
Typ.
-3.0 www.DataSheet.co.kr
-2.7
26.0
–
12.4
Max.
-2.3
–
–
–
–
Units
V
V
A
V
dB
Input Return Loss
S11 – –5.2 –
dB
Output Return Loss
S22
– –12.3 –
dB
Power Output3,4
Power Added Efficiency3,4
POUT
PAE
– 131.0 –
– 45 –
W
%
Power Gain3,4
PG – 10.2 –
Output Mismatch Stress
VSWR
–
– 5:1
Notes:
1 Measured on-wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV96100F2-TB (838179) under 100 µS pulse width, 10% duty
4 Fixture loss de-embedded.
dB
Y
Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2 CGHV96100F2 Rev 1.0, Preliminary
Conditions
VDS = 10 V, ID = 28.8 mA
VDS = 40 V, ID = 1000 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 28.8 mA
VDD = 40 V, IDQ = 1000 mA,
PIN = -20 dBm
VDD = 40 V, IDQ = 1000 mA,
PIN = -20 dBm
VDD = 40 V, IDQ = 1000 mA,
PIN = -20 dBm
VDD = 40 V, IDQ = 1000 mA,
PIN = 41 dBm
VDD = 40 V, IDQ = 1000 mA,
PIN = 41 dBm
VDD = 40 V, IDQ = 1000 mA,
PIN = 41 dBm
No damage at all phase angles,
VDD = 40 V, IDQ = 1000 mA,
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Datasheet pdf - http://www.DataSheet4U.net/
