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CGHV96100F2 Datasheet Preview

CGHV96100F2 Datasheet

Input/Output Matched GaN HEMT / Power Amplifer

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CGHV96100F2
100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier
Cree’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally
Matched (IM) FET offers excellent power added efficiency in comparison
to other technologies. GaN has superior properties compared to silicon or
gallium arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs also
offer greater power density and wider bandwidths compared to GaAs
transistors. This IM FET is available in a metal/ceramic flanged package
for optimal electrical and thermal performance.
PN:
Package
CTGypHeV:9464100201F02
Typical Performance Over 8.4-9.6 GHz (TC = 25˚C)
Parameter
8.4 GHz 8.8 GHz 9.0 GHz 9.2 GHz 9.4 GHz 9.6 GHz
Linear Gain
12.7
12.4
12.7
13.1
13.1
12.4
Output Power
151 147 150 152 140 131
Power Gain
Power Added Efficiency
10.8
44
10.6
42
10.7
www.DataSheet.co.kr
44
10.7
43
10.5
45
10.2
45
Note: Measured in CGHV96100F2-TB (838179) under 100 µS pulse width, 10% duty, Pin 41.0 dBm (7.9 W)
Units
dB
W
dB
%
Features
8.4 - 9.6 GHz Operation
145 W POUT typical
10 dB Power Gain
45 % Typical PAE
50 Ohm Internally Matched
<0.3 dB Power Droop
Applications
Marine Radar
Weather Monitoring
Air Traffic Control
Maritime Vessel Traffic Control
Port Security
Subject to change without notice.
www.cree.com/wireless
1
Datasheet pdf - http://www.DataSheet4U.net/




CREE

CGHV96100F2 Datasheet Preview

CGHV96100F2 Datasheet

Input/Output Matched GaN HEMT / Power Amplifer

No Preview Available !

Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Conditions
Drain-source Voltage
Gate-source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Drain Current1
Maximum Forward Gate Current
Soldering Temperature2
Screw Torque
VDSS
VGS
PDISS
TSTG
TJ
IDMAX
IGMAX
TS
τ
100
-10, +2
115.2 / 222.0
-65, +150
225
12
28.8
245
40
Volts
Volts
Watts
˚C
˚C
Amps
mA
˚C
in-oz
25˚C
25˚C
(CW / Pulse)
25˚C
Thermal Resistance, Junction to Case
RθJC
0.63
˚C/W
Pulse Width = 100 µs, Duty
Cycle = 10%, PDISS = 222.0 W
Thermal Resistance, Junction to Case
RθJC
1.06
˚C/W
CW, 85˚C, PDISS = 115.2 W
Case Operating Temperature
TC -40, +95 ˚C
Note:
1 Current limit for long term reliable operation.
2 Refer to the Application Note on soldering at http://www.cree.com/rf/tools-and-support/document-library
Electrical Characteristics (Frequency = 9.6 GHz unless otherwise stated; TC = 25˚C)
Characteristics
DC Characteristics1
Gate Threshold Voltage
Gate Quiscent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
RF Characteristics3
Small Signal Gain
Symbol
VGS(TH)
VGS(Q)
IDS
VBD
S21
Min.
-3.8
21.0
100
Typ.
-3.0 www.DataSheet.co.kr
-2.7
26.0
12.4
Max.
-2.3
Units
V
V
A
V
dB
Input Return Loss
S11 – –5.2 –
dB
Output Return Loss
S22
– –12.3 –
dB
Power Output3,4
Power Added Efficiency3,4
POUT
PAE
– 131.0 –
– 45 –
W
%
Power Gain3,4
PG – 10.2 –
Output Mismatch Stress
VSWR
– 5:1
Notes:
1 Measured on-wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV96100F2-TB (838179) under 100 µS pulse width, 10% duty
4 Fixture loss de-embedded.
dB
Y
Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2 CGHV96100F2 Rev 1.0, Preliminary
Conditions
VDS = 10 V, ID = 28.8 mA
VDS = 40 V, ID = 1000 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 28.8 mA
VDD = 40 V, IDQ = 1000 mA,
PIN = -20 dBm
VDD = 40 V, IDQ = 1000 mA,
PIN = -20 dBm
VDD = 40 V, IDQ = 1000 mA,
PIN = -20 dBm
VDD = 40 V, IDQ = 1000 mA,
PIN = 41 dBm
VDD = 40 V, IDQ = 1000 mA,
PIN = 41 dBm
VDD = 40 V, IDQ = 1000 mA,
PIN = 41 dBm
No damage at all phase angles,
VDD = 40 V, IDQ = 1000 mA,
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Datasheet pdf - http://www.DataSheet4U.net/


Part Number CGHV96100F2
Description Input/Output Matched GaN HEMT / Power Amplifer
Maker CREE
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