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CGHV14250 - GaN HEMT

Overview

CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications.

The transistor could be utilized for band specific applications ranging from UHF through 1800 MHz.

The package options are ceramic/metal flange and pill package.

Key Features

  • Reference design amplifier 1.2 - 1.4 GHz Operation.
  • FET Tuning range UHF through 1800 MHz.
  • 330 W Typical Output Power.
  • 18 dB Power Gain.
  • 77% Typical Drain Efficiency.