CGHV14250 Description
CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from UHF through...
CGHV14250 Key Features
- Reference design amplifier 1.2
- 1.4 GHz Operation
- FET Tuning range UHF through 1800 MHz
- 330 W Typical Output Power
- 18 dB Power Gain
- 77% Typical Drain Efficiency
- <0.3 dB Pulsed Amplitude Droop
- Internally pre-matched on input, unmatched output
- May 2015