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CGHV14250 Datasheet Preview

CGHV14250 Datasheet

GaN HEMT

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CGHV14250
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed
specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the
CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could
be utilized for band specific applications ranging from UHF through 1800 MHz. The package
options are ceramic/metal flange and pill package.
Package Type:P4N4:0C1G62H,V41440215601
Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.2 GHz
1.25 GHz
1.3 GHz
1.35 GHz
Output Power
365 365 350 310
1.4 GHz
330
Gain
18.6
18.6
18.4
17.9
18.2
Drain Efficiency
80 80 77 74 76
Note:
Measured in the CGHV14250-AMP amplifier circuit, under 500 μs pulse width, 10% duty cycle, PIN = 37 dBm.
Units
W
dB
%
Features
• Reference design amplifier 1.2 - 1.4 GHz Operation
• FET Tuning range UHF through 1800 MHz
• 330 W Typical Output Power
• 18 dB Power Gain
• 77% Typical Drain Efficiency
• <0.3 dB Pulsed Amplitude Droop
• Internally pre-matched on input, unmatched output
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV14250 Datasheet Preview

CGHV14250 Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
VDSS
125
VGS -10, +2
TSTG -65, +150
TJ 225
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
IGMAX
IDMAX
TS
τ
42
18
245
40
CW Thermal Resistance, Junction to Case3
RθJC 0.95
Pulsed Thermal Resistance, Junction to Case3
RθJC
0.57
Pulsed Thermal Resistance, Junction to Case4
RθJC
0.63
Case Operating Temperature5
TC -40, +130
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 Measured for the CGHV14250P
4 Measured for the CGHV14250F
5 See also, the Power Dissipation De-rating Curve on Page 5
Electrical Characteristics
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
PDISS = 167 W, 65˚C
PDISS = 167 W, 500 µsec, 10%, 85˚C
PDISS = 167 W, 500 µsec, 10%, 85˚C
PDISS = 167 W, 500 µsec, 10%
Characteristics
Symbol
Min.
DC Characteristics1 (TC = 25˚C)
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current2
IDS 31.4
Drain-Source Breakdown Voltage
VBR 150
RF Characteristics3 (TC = 25˚C, F0 = 1.3 GHz unless otherwise noted)
Output Power
POUT
275
Drain Efficiency
DE 63
Power Gain
GP
Pulsed Amplitude Droop
D–
Typ.
-3.0
-2.7
37.6
330
77
18.2
-0.3
Output Mismatch Stress
VSWR
5:1
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV14250-AMP. Pulse Width = 500 μS, Duty Cycle = 10%.
Max.
-2.3
Units
Conditions
VDC VDS = 10 V, ID = 41.8 mA
VDC VDS = 50 V, ID = 500 mA
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 41.8 mA
W VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm
% VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm
dB VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm
dB VDD = 50 V, IDQ = 500 mA
Y No damage at all phase angles,
VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm Pulsed
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV14250 Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV14250
Description GaN HEMT
Maker Cree
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