CGHV96050F1
Description
Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.
Key Features
- 7.9 - 8.4 GHz Operation
- 80 W POUT typical >13 dB Power Gain
- 33% Typical PAE
- 50 Ohm Internally Matched
- <0.1 dB Power Droop
