CGHV96050F1 Overview
Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in parison to other technologies. GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
CGHV96050F1 Key Features
- 8.4 GHz Operation
- 33% Typical PAE
- 50 Ohm Internally Matched
- <0.1 dB Power Droop