CGHV96050F1 Input/Output Matched GaN HEMT

CREE

CGHV96050F1 Description

CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT .
Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.

CGHV96050F1 Features

* 7.9 - 8.4 GHz Operation
* 80 W POUT typical >13 dB Power Gain
* 33% Typical PAE
* 50 Ohm Internally Matched

CGHV96050F1 Applications

* Satellite Communication
* Terrestrial Broadband Large Signal Models Available for ADS and MWO Rev 2.2 - May 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed. com CGHV96050F1 Absolute Maximum Ratings (not simultaneous) Parameter Drain-source Voltage Gate-source Voltage Pow

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CGHV96050F1 Datasheet Preview — Preview of CGHV96050F1 PDF

Datasheet Details

Part number: CGHV96050F1
Manufacturer: CREE
File Size: 1.59 MB
Datasheet: CGHV96050F1-CREE.pdf
Description: Input/Output Matched GaN HEMT

📁 Related Datasheet

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📌 All Tags

Input Output Matched GaN HEMT CREE

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