CGHV96050F1 datasheet, hemt equivalent, CREE

Features and benefits

* 7.9 - 8.4 GHz Operation
*
* 80 W POUT typical >13 dB Power Gain
* 33% Typical PAE
* 50 Ohm Internally Matched
* <0.1 dB Power Droop Appli.

Application

* Satellite Communication
* Terrestrial Broadband Large Signal Models Available for ADS and MWO Rev 2.2 - May 2.

Description

Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has supe.

Image gallery