Datasheet4U.com

CGHV96130F - GaN HEMT

Wolfspeed

📥 Download Datasheet

CGHV96130F Datasheet Preview — Preview of CGHV96130F PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	CGHV96130F
Manufacturer	Wolfspeed
File Size	937.83 KB
Description	GaN HEMT
Datasheet	CGHV96130F-Wolfspeed.pdf

CGHV96130F Product details

Description

Cree’s CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.

Features

8.4 - 9.6 GHz Operation.
166 W POUT typical 7.5 dB Power Gain.
42% Typical PAE.
50 Ohm Internally Matched.

📁 CGHV96130F Similar Datasheet

CGHV96100F2 - GaN Amplifier (MACOM)
CGHV96050F1 - Input/Output Matched GaN HEMT (CREE)
CGHV14250 - GaN HEMT (Cree)
CGHV14500 - GaN HEMT (Cree)
CGHV14500F - GaN HEMT (MACOM)
CGHV14800 - GaN HEMT (Cree)
CGHV14800F - GaN HEMT (Cree)
CGHV1F006S - GaN HEMT (Cree)

Other Datasheets by Wolfspeed

CGHV96050F2 - GaN HEMT
CGHV14800F1 - 800W GaN Transistor
CGHV1F025S - GaN HEMT
CGHV1J006D - GaN HEMT Die
CGHV1J025D - GaN HEMT Die
CGHV1J070D - GaN HEMT Die

Published: Apr 8, 2021 |