CGHV14500F - GaN HEMT

Name: CGHV14500F
SKU: CGHV14500F-1559318

MACOM

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Datasheet Details

Part number	CGHV14500F
Manufacturer	MACOM
File Size	2.29 MB
Description	GaN HEMT
Datasheet	CGHV14500F-MACOM.pdf

CGHV14500F Product details

Description

The CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for DC - 1.8 GHz L-Band radar amplifier applications.

Features

Reference design amplifier 1.2 - 1.4 GHz Operation.
FET tuning range UHF through 1800 MHz.
500 W Typical Output Power.
16 dB Power Gain.
68% Typical Drain Efficiency.

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Published: Dec 30, 2024 |