CGHV14500F Datasheet (MACOM)

CGHV14500F, GaN HEMT

The CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for DC - 1.8 GHz L-Band radar amplifier applications.

The transistor could be utilized for band spe

CGHV14500F Features

* Reference design amplifier 1.2 - 1.4 GHz Operation

* FET tuning range UHF through 1800 MHz

* 500 W Typical Output Power

* 16 dB Power Gain

* 68% Typical Drain Efficiency