CGHV14800F Datasheet (Cree)

CGHV14800F, GaN HEMT

CGHV14800F 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800 ideal for 1.2 - 1.4 GHz pulsed L-Band radar amplifier applications, such as air traffic control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range survelliance radar

CGHV14800F Features

* Reference design amplifier 1.2 - 1.4 GHz Operation

* 910 W Typical Output Power

* 14 dB Power Gain

* 70% Typical Drain Efficiency