CGHV22200 - GaN HEMT

Name: CGHV22200
SKU: CGHV22200-988489

Cree

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Datasheet Details

Part number	CGHV22200
Manufacturer	Cree
File Size	769.10 KB
Description	GaN HEMT
Datasheet	CGHV22200-Cree.pdf

CGHV22200 Product details

Description

RES, 1/16 W, 0603, 1%, 10.0 OHMS RES, 1/16 W, 0603, 1%, 5.1 OHMS CAP, 470 pF, 5%, 100 V, 0603, X CAP, 1.0 UF, 100 V, 10%, x7R, 121 CAP, 100 UF, 20%, 160 V, ELEC CAP, 10 UF, 16 V, TANTALUM, 2312 CAP, 10.0 pF, 5

Features

1.8 - 2.2 GHz Operation.
18 dB Gain.
-35 dBc ACLR at 50 W PAVE.
31-35 % Efficiency at 50 W PAVE.
High Degree of DPD Correction Can be Applied Rev 1.0.
May 2015 Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature3 Maximum Forward Gate Current Maximum Dr.

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Published: Apr 19, 2016 |