CGHV27200 - GaN HEMT

Datasheet Details

2.5 - 2.7 GHz Operation.
16 dB Gain.
-37 dBc ACLR at 50 W PAVE ober 2012 Rev 0.1.
Oct.
29 % Efficiency at 50 W PAVE.
High Degree of DPD Correction Can be Applied Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Curr.

📁 CGHV27200 Similar Datasheet

Other Datasheets by Cree

Published: May 21, 2014 |