CGHV27060MP Datasheet (Cree)

CGHV27060MP, GaN HEMT

CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm.

The transistor is a broadband device with no internal input or output match which allows for the agility to apply to a wide range of frequencies from UHF thru 2.7GHz.

The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF, L Band or low S Band

CGHV27060MP Features

* - WCDMA

* 2.5 - 2.7 GHz Reference Design Amplifier

* 18 dB Gain at 14 W PAVE

* -35 dBc ACLR at 14 W PAVE

* 33% Efficiency at 14 W PAVE

* High Degree of DPD Correction Can be Applied Features - Pulsed

* 16.5 dB Gain at Pulsed PSAT

* 70%