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CGHV1J006D - GaN HEMT Die

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Datasheet Details

Part number CGHV1J006D
Manufacturer Wolfspeed
File Size 737.09 KB
Description GaN HEMT Die
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CGHV1J006D Product details

Description

Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process.

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