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CGHV96100F2 Datasheet, MACOM

CGHV96100F2 hemt equivalent, gan hemt.

CGHV96100F2 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 878.08KB)

CGHV96100F2 Datasheet

Features and benefits


* 8.4 - 9.6 GHz Operation
* 145 W POUT typical
* 10 dB Power Gain
* 40% Typical PAE
* 50 Ohm Internally Matched
* <0.3 dB Power Droop Application.

Application


* Marine Radar
* Weather Monitoring
* Air Traffic Control
* Maritime Vessel Traffic Control
* Port S.

Description

The CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superio.

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CGHV96100F2 Page 1 CGHV96100F2 Page 2 CGHV96100F2 Page 3

TAGS

CGHV96100F2
GaN
HEMT
MACOM

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