CGHV96100F2 hemt equivalent, gan hemt.
* 8.4 - 9.6 GHz Operation
* 145 W POUT typical
* 10 dB Power Gain
* 40% Typical PAE
* 50 Ohm Internally Matched
* <0.3 dB Power Droop
Application.
* Marine Radar
* Weather Monitoring
* Air Traffic Control
* Maritime Vessel Traffic Control
* Port S.
The CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superio.
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