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CGHV96100F2 - GaN Amplifier

Description

The CGHV96100F2 is a gallium nitride (GaN) amplifier.

This GaN amplifier offers excellent power added efficiency in comparison to other technologies.

Features

  • 8.4 - 9.6 GHz Operation.
  • 145 W POUT typical.
  • 10 dB Power Gain.
  • 40% Typical PAE.
  • 50 Ohm Internally Matched.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV96100F2 100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN Amplifier Description The CGHV96100F2 is a gallium nitride (GaN) amplifier. This GaN amplifier offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This amplifier is available in a metal/ceramic flanged package for optimal electrical and thermal performance. PN: CGHV96100F2 Package Type: 440217 Typical Performance Over 8.4 - 9.6 GHz (TC = 25ºC) Parameter Linear Gain 8.4 GHz 13.8 8.8 GHz 12.8 9.0 GHz 13.0 9.2 GHz 12.4 9.
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