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CGHV96130F - 130W GaN Amplifier

General Description

The CGHV96130F is a gallium nitride (GaN) amplifier.

This GaN amplifier offers excellent power added efficiency in comparison to other technologies.

Key Features

  • 8.4 - 9.6 GHz Operation.
  • 166 W POUT typical.
  • 7.5 dB Power Gain.
  • 42% Typical PAE.
  • 50 Ohm Internally Matched.

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Full PDF Text Transcription (Reference)

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CGHV96130F 130 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN Amplifier Description The CGHV96130F is a gallium nitride (GaN) amplifier. This GaN amplifier offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This amplifier is available in a metal/ceramic flanged package for optimal electrical and thermal performance. Package Type: 440217 PN: CGHV96130F Typical Performance Over 8.4 - 9.6 GHz (TC = 25ºC) Parameter Linear Gain 8.4 GHz 8.6 GHz 8.8 GHz 9.0 GHz 9.2 GHz 13.6 13.1 13.3 13.