CGHV96130F - 130W GaN Amplifier

Description

The CGHV96130F is a gallium nitride (GaN) amplifier.

This GaN amplifier offers excellent power added efficiency in comparison to other technologies.

Features

8.4 - 9.6 GHz Operation.
166 W POUT typical.
7.5 dB Power Gain.
42% Typical PAE.
50 Ohm Internally Matched.

MACOM

📥 Download Datasheet

Datasheet Details

Part number	CGHV96130F
Manufacturer	MACOM
File Size	1.38 MB
Description	130W GaN Amplifier
Datasheet	CGHV96130F Datasheet
Additional preview pages of the CGHV96130F datasheet.

📁 Similar Datasheet

CGHV96130F - GaN HEMT (Wolfspeed)
CGHV96100F2 - Input/Output Matched GaN HEMT / Power Amplifer (CREE)
CGHV96100F2 - GaN HEMT (Wolfspeed)
CGHV96050F1 - Input/Output Matched GaN HEMT (CREE)
CGHV96050F2 - GaN HEMT (Wolfspeed)
CGHV14250 - GaN HEMT (Cree)
CGHV14250 - GaN HEMT (Wolfspeed)
CGHV14500 - GaN HEMT (Cree)
CGHV14800 - GaN HEMT (Cree)
CGHV14800 - GaN HEMT (Wolfspeed)

Other Datasheets by MACOM

CGHV96100F2 - GaN Amplifier
CGHV96050F2 - GaN HEMT
CGHV14500F - GaN HEMT
CGHV1F025S - GaN HEMT
CGHV27030S - GaN HEMT
CGHV31500F1 - 500W GaN HPA
CGHV35120F - GaN HEMT
CGHV40030 - GaN HEMT

Full PDF Text Transcription

Click to expand full text

CGHV96130F 130 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN Amplifier Description The CGHV96130F is a gallium nitride (GaN) amplifier. This GaN amplifier offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This amplifier is available in a metal/ceramic flanged package for optimal electrical and thermal performance. Package Type: 440217 PN: CGHV96130F Typical Performance Over 8.4 - 9.6 GHz (TC = 25ºC) Parameter Linear Gain 8.4 GHz 8.6 GHz 8.8 GHz 9.0 GHz 9.2 GHz 13.6 13.1 13.3 13.

Published: May 13, 2024 |