CGHV96130F datasheet, hemt equivalent, MACOM

Features and benefits

* 8.4 - 9.6 GHz Operation
* 166 W POUT typical
* 7.5 dB Power Gain
* 42% Typical PAE
* 50 Ohm Internally Matched
* <0.3 dB Power Droop Applicatio.

Application

* Marine Radar
* Weather Monitoring
* Air Traffic Control
* Maritime Vessel Traffic Control
* Port S.

Description

The CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior.

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