IRF6635 mosfet equivalent, directfet power mosfet.
WIDTH 100 T J = 150°C T J = 25°C T J = 40°C
Typical RDS(on) (Normalized)
Fig 5. Typical Output Characteristics
1.5 ID = 32A
ID, Drain-to-Source Current (Α)
10
1.0
1.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6635 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is .
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