IRF6633APbF mosfet equivalent, power mosfet.
C, Capacitance(pF)
Crss
100 1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
ID, Drain-to-Source Current (A)
10.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6633APbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package .
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