IRF6633PBF mosfet equivalent, power mosfet.
in-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
2.0 ID = 16A VGS = 4.5V VGS = 10V 1.5
ID, Drain-to-Source Current (Α)
100 TJ = 150°C TJ = 25°C 10 TJ = -.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package i.
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