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IRF6633ATRPbF - Power MOSFET

Download the IRF6633ATRPbF datasheet PDF (IRF6633APbF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

The IRF6633APbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile.

Features

  • 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 240 200 160 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 1.45A 1.8A BOTTOM 13A 120 80 40 www. irf. com 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig 14. Maximum Avalanche Energy Vs. Drain Current 5 IRF6633APbF L VCC DUT 0 1K Vds Vgs(th) Id Vgs Fig 15a. Gate Charge Test C.

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Note: The manufacturer provides a single datasheet file (IRF6633APbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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l RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  PD - 97122A IRF6633APbF IRF6633ATRPbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 20V max ±20V max 4.1mΩ@ 10V 7.0mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 11nC 3.9nC 1.7nC 33nC 8.5nC 1.8V MU DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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