Datasheet4U Logo Datasheet4U.com

IRF6631TRPBF - Power MOSFET

Download the IRF6631TRPBF datasheet PDF. This datasheet also covers the IRF6631PBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile.

Features

  • ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 50µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 60 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 3.1A 4.5A BOTTOM 10A 50 40 30 20 10 0 25 50 75 100 125 150 Starting T J , Jun.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6631PBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF6643TRPbF DIGITAL AUDIO MOSFET IRF
IRF6644PbF IR MOSFET Infineon
IRF6648PbF Power MOSFET Infineon
IRF6648TRPbF Power MOSFET Infineon
IRF6662PbF Power MOSFET IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6631 DirectFET Power MOSFET
IRF6631PBF Power MOSFET
IRF6633 DirectFET Power MOSFET
IRF6633APbF Power MOSFET
IRF6633ATRPbF Power MOSFET

Full PDF Text Transcription

Click to expand full text
PD - 97217 DirectFET™ Power MOSFET ‚ RoHs Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Switching and Conduction Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l IRF6631PbF IRF6631TRPbF RDS(on) Qgs2 1.1nC Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 4.4nC RDS(on) Qoss 7.3nC 30V max ±20V max 6.0mΩ @ 10V 8.3mΩ @ 4.5V Qrr 10nC Vgs(th) 1.8V 12nC SQ Applicable DirectFET Outline and Substrate Outline (see p.
Published: |