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IRF6631TRPBF Datasheet, International Rectifier

IRF6631TRPBF mosfet equivalent, power mosfet.

IRF6631TRPBF Avg. rating / M : 1.0 rating-12

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IRF6631TRPBF Datasheet

Features and benefits

istics 1000 VDS = 10V ≤60µs PULSE WIDTH 100 T J = 150°C 10 T J = 25°C T J = -40°C Fig 5. Typical Output Characteristics 2.0 ID = 13A Typical RDS(on) (Normalized) ID, Dr.

Application

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is follo.

Description

The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET packa.

Image gallery

IRF6631TRPBF Page 1 IRF6631TRPBF Page 2 IRF6631TRPBF Page 3

TAGS

IRF6631TRPBF
Power
MOSFET
IRF6631
IRF6631PBF
IRF6633
International Rectifier

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