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IRF6633TRPBF - Power MOSFET

Download the IRF6633TRPBF datasheet PDF. This datasheet also covers the IRF6633PBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile.

Features

  • ltage Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 60 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 200 Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 5.7A 8.7A BOTTOM 13A TOP EAS, Single Pulse Avalanche Energy (mJ) 160 120 80 40 0 25 50 75 100 125.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6633PBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF6643TRPbF DIGITAL AUDIO MOSFET IRF
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IRF6648PbF Power MOSFET Infineon
IRF6648TRPbF Power MOSFET Infineon
IRF6662PbF Power MOSFET IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6633 DirectFET Power MOSFET
IRF6633APbF Power MOSFET
IRF6633ATRPbF Power MOSFET
IRF6633PBF Power MOSFET
IRF6631 DirectFET Power MOSFET

Full PDF Text Transcription

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PD - 97083 DirectFET™ Power MOSFET ‚ RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l IRF6633PbF IRF6633TRPbF RDS(on) RDS(on) Typical values (unless otherwise specified) VDSS VGS 20V max ±20V max 4.1mΩ @ 10V 7.0mΩ @ 4.5V Qg tot Qgd 4.0nC Qgs2 1.2nC Qrr 32nC Qoss 8.8nC Vgs(th) 1.8V 11nC MP Applicable DirectFET Outline and Substrate Outline (see p.
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