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IRF6633 - DirectFET Power MOSFET

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The IRF6633 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile.

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PD - 96989B IRF6633 l RoHs Compliant Containing No Lead and Bromide  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized for both Sync.FET and some Control FET application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 20V max ±20V max 4.1mΩ@ 10V 7.0mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 11nC 4.0nC 1.2nC 32nC 8.8nC 1.8V MP DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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