AUIRLL2705 mosfet equivalent, power mosfet.
l Advanced Planar Technology
l Low On-Resistance
l Logic Level Gate Drive l Dynamic dv/dt Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l .
this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedize.
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