AUIRLL014N mosfet equivalent, power mosfet.
l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allo.
this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedize.
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