AUIRLL024Z mosfet equivalent, power mosfet.
*
*
*
*
*
*
*
Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up.
this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon a.
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperatu.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 265.68KB)