AUIRLL024N datasheet, mosfet equivalent, Infineon

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datasheet Download (Size : 366.91KB)

Features and benefits

* Advanced Planar Technology
* Low On-Resistance
* Logic Level Gate Drive
* Dynamic dv/dt Rating
* 150°C Operating Temperature
* Fast Switching

Application

this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.

Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.

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