AUIRLL024Z
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- Logic Level Gate Drive
- 150°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, Ro HS pliant
- Automotive Qualified
-
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
HEXFET® Power MOSFET
VDSS
55V
RDS(on) typ.
48m max.
60m
ID 5.0A
SOT-223 AUIRLL024Z
G Gate
D Drain
S Source
Base part number AUIRLL024Z
Package Type SOT-223
Standard Pack
Form
Quantity...
