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AUIRL1404L - Power MOSFET

Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • l Advanced Planar Technology l Logic-Level Gate Drive l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • D G S PD - 96385A AUIRL1404S AUIRL1404L HEXFET® Power MOSFET V(BR)DSS 40V RDS(on) max. ID 4mΩ h160A.

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📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AUTOMOTIVE GRADE Features l Advanced Planar Technology l Logic-Level Gate Drive l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * D G S PD - 96385A AUIRL1404S AUIRL1404L HEXFET® Power MOSFET V(BR)DSS 40V RDS(on) max. ID 4mΩ h160A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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