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IS61DDB451236A - 18Mb DDR-II (Burst 4) CIO SYNCHRONOUS SRAM

Download the IS61DDB451236A datasheet PDF. This datasheet also covers the IS61DDB41M18A variant, as both devices belong to the same 18mb ddr-ii (burst 4) cio synchronous sram family and are provided as variant models within a single manufacturer datasheet.

Description

512Kx36 and 1Mx18 configuration available.

On-chip delay-locked loop (DLL) for wide data valid window.

Common I/O read and write ports.

Synchronous pipeline read with late write operation.

Double Data Rate (DDR) interface for read and write input ports.

Fixed 4-b

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Note: The manufacturer provides a single datasheet file (IS61DDB41M18A-IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61DDB41M18A IS61DDB451236A 1Mx18, 512Kx36 18Mb DDR-II (Burst 4) CIO SYNCHRONOUS SRAM ADVANCED INFORMATION JULY 2012 FEATURES DESCRIPTION  512Kx36 and 1Mx18 configuration available.  On-chip delay-locked loop (DLL) for wide data valid window.  Common I/O read and write ports.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface for read and write input ports.  Fixed 4-bit burst for read and write operations.  Clock stop support.  Two input clocks (K and K#) for address and control registering at rising edges only.  Two input clocks (C and C#) for data output control.  Two echo clocks (CQ and CQ#) that are delivered simultaneously with data.  +1.8V core power supply and 1.5V to1.8V VDDQ, used with 0.75V to 0.9V VREF.
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