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ITCH36040A2 - RF LDMOS FET

General Description

The ITCH36040A2 is a 40-watt, internally-matched LDMOS FETs, designed for cellular application with frequencies from 3400 to 3600MHz.

Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, I

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junc.

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Datasheet Details

Part number ITCH36040A2
Manufacturer Innogration
File Size 478.96 KB
Description RF LDMOS FET
Datasheet download datasheet ITCH36040A2 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Innogration (Suzhou) Co., Ltd. 3400-3600MHz, 40W, 28V RF LDMOS FETs Description The ITCH36040A2 is a 40-watt, internally-matched LDMOS FETs, designed for cellular application with frequencies from 3400 to 3600MHz. It can biased at class AB or Class C for linear or pulse application as well Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 380 mA Test signal: Pulsed CW, pulse width: 100Us, Duty cycle: 10% Document Number: ITCH36040A2 Preliminary Datasheet V1.0 ITCH36040A2 I Test signal: WCDMA_1C, (PAR=10.5dB @ 0.01% probability) Features  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Internally Matched for Ease of Use  Excellent thermal stability, low HCI drift Table 1.