ITCH36015E2 - RF Power LDMOS FET

Innogration

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Datasheet Details

Part number	ITCH36015E2
Manufacturer	Innogration
File Size	931.12 KB
Description	RF Power LDMOS FET
Datasheet	ITCH36015E2-Innogration.pdf

ITCH36015E2 Product details

Description

The ITCH36015E2 is a 20-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 700MHz to 3600 MHz ITCH36015E2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 120 mA，Pulse Width =20us, Duty Cycle =10%.Frequency GMAX P_1dB P_3dB ηD (MHz) (dB) (dBm) (dBm) (%) Pavg=33dBm WCDMA Signal(1) Gp ηD ACPR_5M (dB) (%) (dBc) 869 22.9 43.7 44.2 64.1 22.6 21.6 -37.1 881.5 22.9

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Symbol Value Unit VDSS +65 Vdc VGS -10 to +10 Vdc 1/5 Innogration (Suzhou) Co. , Ltd. Document Number: ITCH36015E2 Preli.

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Published: Aug 5, 2018 |